Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 4.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 750 @2A, 3V
Technical parameters/rated power (Max): 40 W
Technical parameters/DC current gain (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 40000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 7.8 mm
External dimensions/width: 2.7 mm
External dimensions/height: 10.8 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6039
|
ST Microelectronics | 功能相似 | TO-126-3 |
t-Npn Si-Darlington Amp
|
||
|
|
NTE Electronics | 功能相似 |
t-Npn Si-Darlington Amp
|
|||
|
|
Motorola | 功能相似 |
t-Npn Si-Darlington Amp
|
|||
2N6039
|
ON Semiconductor | 功能相似 | TO-225-3 |
t-Npn Si-Darlington Amp
|
||
|
|
Continental Device | 功能相似 |
t-Npn Si-Darlington Amp
|
|||
2N6039G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR 2N6039G 达林顿双极晶体管
|
||
BD679A
|
ON Semiconductor | 类似代替 | TO-225-3 |
STMICROELECTRONICS BD679A 单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
|
||
BD679A
|
Central Semiconductor | 类似代替 | SIP |
STMICROELECTRONICS BD679A 单晶体管 双极, NPN, 80 V, 40 W, 4 A, 750 hFE
|
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