Technical parameters/rated voltage (DC): 350 V
Technical parameters/rated current: 20.0 A
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage (collector emitter): 375 V
Technical parameters/rated power (Max): 150 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGT1S20N35G3VLS
|
Fairchild | 功能相似 | TO-263-3 |
20A , 350V N沟道逻辑电平,电压钳位的IGBT 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
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||
ISL9V5036P3
|
Freescale | 功能相似 |
Trans IGBT Chip N-CH 360V 46A 250000mW Automotive 3Pin(3+Tab) TO-220AB Tube
|
|||
ISL9V5036S3S
|
Fairchild | 类似代替 | TO-263-3 |
EcoSPARKTM 500mJ , 360V , N沟道IGBT点火 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
|
||
ISL9V5036S3S
|
ON Semiconductor | 类似代替 | TO-263-3 |
EcoSPARKTM 500mJ , 360V , N沟道IGBT点火 EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
|
||
ISL9V5036S3ST
|
Fairchild | 功能相似 | TO-263-3 |
ON Semiconductor ISL9V5036S3ST N沟道 IGBT, 46 A, Vce=420 V, 3引脚 D2PAK (TO-263)封装
|
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