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Model ISL9V5036S3S
Description Trans IGBT Chip N-CH 360V 46A 250000mW Automotive 3Pin(2+Tab) D2PAK Tube
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Brand: ON Semiconductor
Packaging TO-263-3
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6471) Minimum order quantity(1)
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Technical parameters/dissipated power: 250000 mW

Technical parameters/breakdown voltage (collector emitter): 390 V

Technical parameters/rated power (Max): 250 W

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 250000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -40℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
HGT1S20N35G3VLS HGT1S20N35G3VLS Fairchild 功能相似 TO-263-3
20A ， 350V N沟道逻辑电平，电压钳位的IGBT 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
PDF
ISL9V5036P3 ISL9V5036P3 Freescale 类似代替
Trans IGBT Chip N-CH 360V 46A 250000mW Automotive 3Pin(3+Tab) TO-220AB Tube
ISL9V5036S3ST ISL9V5036S3ST Fairchild 功能相似 TO-263-3
FAIRCHILD SEMICONDUCTOR ISL9V5036S3ST 单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚

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