Technical parameters/rated voltage (DC): | 360 V |
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Technical parameters/rated current: | 31.0 A |
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Technical parameters/dissipated power: | 250000 mW |
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Technical parameters/rise time: | 2.10 µs |
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Technical parameters/breakdown voltage (collector emitter): | 390 V |
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Technical parameters/rated power (Max): | 250 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 250000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Height: | 4.83 mm |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -40℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HGT1S20N35G3VLS
|
Fairchild | 功能相似 | TO-263-3 |
20A ， 350V N沟道逻辑电平，电压钳位的IGBT 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
|
||
ISL9V5036P3
|
Freescale | 类似代替 |
Trans IGBT Chip N-CH 360V 46A 250000mW Automotive 3Pin(3+Tab) TO-220AB Tube
|
|||
ISL9V5036S3ST
|
Fairchild | 功能相似 | TO-263-3 |
FAIRCHILD SEMICONDUCTOR ISL9V5036S3ST 单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
|
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