Technical parameters/power supply voltage (DC): 3.30 V
Technical parameters/rated current: 18.0 mA
Technical parameters/power supply current: 18 mA
Technical parameters/memory capacity: 4000000 B
Technical parameters/access time (Max): 55 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 44
Encapsulation parameters/Encapsulation: TSOP
External dimensions/packaging: TSOP
Other/Product Lifecycle: End of Life
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FM21L16-60-TG
|
Cypress Semiconductor | 功能相似 | TSOP-44 |
F-RAM, Ramtron 非易失性铁电 RAM 存储器 快写入速度 高耐受性 低功耗 ### FRAM（铁电 RAM） FRAM（铁电随机存取存储器）是非易失存储器，将铁电膜用作电容器来储存数据。 F-RAM 有 ROM 和 RAM 设备的特点，具备高速存取、写入模式的高耐受性、低功耗、非易失和出色的防篡改功能。 因此，这款存储器特别适用于需要高安全性和低消耗的智能卡，以及移动电话和其他设备。
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FM22L16-55-TGTR
|
Cypress Semiconductor | 类似代替 | TSOP-44 |
FM22L16 Series 4Mb (256K x 16) 3V 55ns Parallel F-RAM Memory - TSOP-44
|
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