Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 200 @1mA, 6V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJV1845
|
Fairchild | 类似代替 | SOT-23 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
FJV1845EMTF
|
Fairchild | 类似代替 | SOT-23-3 |
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
FJV1845EMTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
FJV1845FMTF
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FJV1845FMTF 单晶体管 双极, NPN, 120 V, 110 MHz, 300 mW, 50 mA, 300 hFE
|
||
FJV1845UMTF
|
Fairchild | 类似代替 | SOT-23-3 |
Trans GP BJT NPN 120V 0.05A 3Pin SOT-23 T/R
|
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