Technical parameters/frequency: 100 MHz
Technical parameters/dissipated power: 0.3 W
Technical parameters/breakdown voltage (collector emitter): 120 V
Technical parameters/minimum current amplification factor (hFE): 400 @1mA, 6V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJV1845EMTF
|
Fairchild | 类似代替 | SOT-23-3 |
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
FJV1845EMTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
小信号 NPN 晶体管，高于 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
FJV1845FMTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON Semiconductor FJV1845FMTF , NPN 晶体管, 50 mA, Vce=120 V, HFE:150, 110 MHz, 3引脚 SOT-23封装
|
||
FJV1845PMTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON Semiconductor FJV1845PMTF , NPN 晶体管, 50 mA, Vce=120 V, HFE:150, 110 MHz, 3引脚 SOT-23封装
|
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