Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 8.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 80 W
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 8 @2A, 5V
Technical parameters/Maximum current amplification factor (hFE): 60
Technical parameters/rated power (Max): 80 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJP13007TU
|
ON Semiconductor | 类似代替 | TO-220-3 |
高压开关模式的应用 High Voltage Switch Mode Application
|
||
PHE13007,127
|
We En Semiconductor | 功能相似 | TO-220-3 |
PHE13007 系列 400 V 8 A NPN 硅 漫射式 功率 晶体管 - TO-220AB
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||
PHE13007,127
|
NXP | 功能相似 | TO-220-3 |
PHE13007 系列 400 V 8 A NPN 硅 漫射式 功率 晶体管 - TO-220AB
|
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