Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 80 W |
|
Technical parameters/breakdown voltage (collector emitter): | 400 V |
|
Technical parameters/Maximum allowable collector current: | 8A |
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Technical parameters/minimum current amplification factor (hFE): | 8 @2A, 5V |
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Technical parameters/maximum current amplification factor (hFE): | 40 |
|
Technical parameters/rated power (Max): | 80 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 80000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
|
Dimensions/Length: | 10.3 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 9.4 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDX53CTU
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor BDX53CTU NPN 达林顿晶体管对, 8 A, Vce=100 V, HFE=750, 3引脚 TO-220封装
|
||
BDX53CTU
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor BDX53CTU NPN 达林顿晶体管对, 8 A, Vce=100 V, HFE=750, 3引脚 TO-220封装
|
||
FJP13007
|
Fairchild | 功能相似 | TO-220-3 |
高压快速开关NPN功率晶体管 High Voltage Fast-Switching NPN Power Transistor
|
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