Technical parameters/dissipated power: 60 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 750 @3A, 3V
Technical parameters/rated power (Max): 60 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 60 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 9.9 mm
External dimensions/width: 4.5 mm
External dimensions/height: 15.95 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDX53C
|
ON Semiconductor | 类似代替 | TO-220-3 |
塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors
|
||
BDX53C
|
Continental Device | 类似代替 | SFM |
塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors
|
||
|
BDX53C
|
Poinn | 类似代替 |
塑料中功率互补硅晶体管 Plastic Medium-Power Complementary Silicon Transistors
|
|||
BDX53CG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR BDX53CG 单晶体管 双极, 达林顿, NPN, 100 V, 65 W, 8 A, 750 hFE
|
||
BUL89
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS BUL89 单晶体管 双极, NPN, 400 V, 110 W, 12 A, 10 hFE
|
||
|
|
Rochester | 类似代替 | TO-220 |
Trans Darlington NPN 100V 10A 80000mW 3Pin(3+Tab) TO-220AB Tube
|
||
TIP142TTU
|
Freescale | 类似代替 | TO-220 |
Trans Darlington NPN 100V 10A 80000mW 3Pin(3+Tab) TO-220AB Tube
|
||
TIP142TTU
|
Fairchild | 类似代替 | TO-220-3 |
Trans Darlington NPN 100V 10A 80000mW 3Pin(3+Tab) TO-220AB Tube
|
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