Technical parameters/dissipated power: 80 W
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/minimum current amplification factor (hFE): 8 @2A, 5V
Technical parameters/rated power (Max): 80 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BDX53CTU
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor BDX53CTU NPN 达林顿晶体管对, 8 A, Vce=100 V, HFE=750, 3引脚 TO-220封装
|
||
BDX53CTU
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor BDX53CTU NPN 达林顿晶体管对, 8 A, Vce=100 V, HFE=750, 3引脚 TO-220封装
|
||
FJP13007
|
Fairchild | 功能相似 | TO-220-3 |
高压快速开关NPN功率晶体管 High Voltage Fast-Switching NPN Power Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review