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Model FDG6317NZ
Description ON Semiconductor PowerTrench Series Dual Si N-channel MOSFET FDG6317NZ, 700 mA, Vds=20 V, 6-pin SOT-363 (SC-70) package
Product QR code
Brand: ON Semiconductor
Packaging SC-70-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.27  yuan 1.27yuan
5+:
$ 1.7145
25+:
$ 1.5875
50+:
$ 1.4986
100+:
$ 1.4605
500+:
$ 1.4351
2500+:
$ 1.4034
5000+:
$ 1.3907
10000+:
$ 1.3716
Quantity
5+
25+
50+
100+
500+
Price
$1.7145
$1.5875
$1.4986
$1.4605
$1.4351
Price $ 1.7145 $ 1.5875 $ 1.4986 $ 1.4605 $ 1.4351
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9359) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.3 Ω

Technical parameters/dissipated power: 300 mW

Technical parameters/threshold voltage: 1.2 V

Technical parameters/drain source voltage (Vds): 20 V

Technical parameters/rise time: 7 ns

Technical parameters/Input capacitance (Ciss): 66.5pF @10V(Vds)

Technical parameters/rated power (Max): 300 mW

Technical parameters/descent time: 2.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 300 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SC-70-6

External dimensions/length: 2 mm

External dimensions/width: 1.25 mm

External dimensions/height: 1 mm

External dimensions/packaging: SC-70-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Power Management, Industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PMGD280UN,115 PMGD280UN,115 NXP 功能相似 SOT-323-6
NXP PMGD280UN,115 双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
PDF
PMGD280UN,115 PMGD280UN,115 Nexperia 功能相似 SC-70-6
NXP PMGD280UN,115 双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.28 ohm, 4.5 V, 700 mV
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SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Intertechnology 功能相似 SOT-363-6
VISHAY SI1902DL-T1-E3 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V
PDF
SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Semiconductor 功能相似 SC-70
VISHAY SI1902DL-T1-E3 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V
PDF
SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Siliconix 功能相似 SC-70-6
VISHAY SI1902DL-T1-E3 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V
PDF
SI1902DL-T1-E3 SI1902DL-T1-E3 VISHAY 功能相似 SC-70-6
VISHAY SI1902DL-T1-E3 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V
PDF

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