Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.32 Ω
Technical parameters/polarity: N-Channel, Dual N-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): 660 mA
Technical parameters/rise time: 16 ns
Technical parameters/thermal resistance: 400℃/W (RθJA)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 270 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70
External dimensions/length: 2.2 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6317NZ
|
Fairchild | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR FDG6317NZ 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
|
||
FDG6317NZ
|
ON Semiconductor | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR FDG6317NZ 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
|
||
FDG6335N
|
ON Semiconductor | 功能相似 | SC-70-6 |
FAIRCHILD SEMICONDUCTOR FDG6335N 双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
|
||
NTJD4001NT1G
|
ON Semiconductor | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR NTJD4001NT1G 双路场效应管, MOSFET, 双N沟道, 250 mA, 30 V, 1 ohm, 4 V, 1.2 V
|
||
NTJD5121NT1G
|
ON Semiconductor | 功能相似 | SOT-363 |
ON SEMICONDUCTOR NTJD5121NT1G 双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
|
||
PMGD290XN,115
|
Nexperia | 功能相似 | SC-70-6 |
NXP PMGD290XN,115 双路场效应管, MOSFET, 双N沟道, 200 mA, 20 V, 0.29 ohm, 4.5 V, 1 V
|
||
SI1900DL-T1-E3
|
VISHAY | 类似代替 | SC-70-6 |
TRANSISTOR 590mA, 30V, 2Channel, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6Pin, FET General Purpose Small Signal
|
||
SI1900DL-T1-E3
|
Vishay Semiconductor | 类似代替 | SOT-363-6 |
TRANSISTOR 590mA, 30V, 2Channel, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6Pin, FET General Purpose Small Signal
|
||
SI1902CDL-T1-GE3
|
VISHAY | 类似代替 | SC-70-6 |
双N沟道20 V （D -S ）的MOSFET Dual N-Channel 20 V (D-S) MOSFET
|
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