Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 100 GHz
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 8000000 B
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 36
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1265AB-100+
|
Dallas Semiconductor | 类似代替 | eDIP |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265AB-100+
|
Maxim Integrated | 类似代替 | DIP-36 |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265W-100IND
|
Maxim Integrated | 类似代替 | EDIP-36 |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265Y-100+
|
Maxim Integrated | 类似代替 | EDIP-36 |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265Y-100+
|
Dallas Semiconductor | 类似代替 | DIP |
IC NVSRAM 8Mbit 100NS 36DIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review