Technical parameters/access time: 100 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.75V ~ 5.25V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-36
External dimensions/length: 53.34 mm
External dimensions/width: 18.8 mm
External dimensions/height: 10.29 mm
External dimensions/packaging: DIP-36
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1265AB-100
|
Maxim Integrated | 类似代替 | EDIP-36 |
IC NVSRAM 8Mbit 100NS 36DIP
|
||
DS1265AB-70IND+
|
Maxim Integrated | 类似代替 | DIP-36 |
IC NVSRAM 8Mbit 70NS 36DIP
|
||
|
|
Maxim Integrated | 类似代替 | DIP |
3.3V 8Mb Nonvolatile SRAMl
|
||
DS1265W-100-IND
|
Dallas Semiconductor | 类似代替 | DIP |
3.3V 8Mb Nonvolatile SRAMl
|
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