Technical parameters/power supply current: 220 mA
Technical parameters/digits: 36
Technical parameters/access time: 3 ns
Technical parameters/access time (Max): 3 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 3.135V ~ 3.6V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 119
Encapsulation parameters/Encapsulation: BGA-119
External dimensions/height: 1.46 mm
External dimensions/packaging: BGA-119
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CY7C1360C-166BZC
|
Cypress Semiconductor | 功能相似 | FBGA-165 |
CY7C1360C 系列 9 Mb (256 K x 36) 3.3 V 3.5 ns 静态RAM - FPBGA-165
|
||
CY7C1360C-166BZI
|
Cypress Semiconductor | 功能相似 | FBGA-165 |
9兆位( 256K ×36 / 512K ×18 )流水线式SRAM 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
||
|
|
Rochester | 功能相似 | LBGA |
9兆位( 256K ×36 / 512K ×18 )流水线式SRAM 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
||
CY7C1360C-166BZXI
|
Cypress Semiconductor | 功能相似 | BGA |
9兆位( 256K ×36 / 512K ×18 )流水线式SRAM 9-Mbit (256K x 36/512K x 18) Pipelined SRAM
|
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