Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 190 mA
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 10 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 830 mW
Technical parameters/input capacitance: 40.0 pF
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 190 mA
Technical parameters/rise time: 70 ns
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.8 mm
External dimensions/width: 4.2 mm
External dimensions/height: 5.2 mm
External dimensions/packaging: TO-92-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BST72A,112
|
NXP | 类似代替 | TO-92-3 |
SPT N-CH 100V 0.19A
|
||
VN0808L
|
Vishay Siliconix | 功能相似 | TO-92 |
Trans MOSFET N-CH 80V 0.3A 3Pin TO-92
|
||
VN0808L
|
Suptertex | 功能相似 |
Trans MOSFET N-CH 80V 0.3A 3Pin TO-92
|
|||
VN0808L
|
Supertex | 功能相似 | TO-92 |
Trans MOSFET N-CH 80V 0.3A 3Pin TO-92
|
||
VN0808L-G
|
Supertex | 功能相似 | TO-92 |
晶体管, MOSFET, N沟道, 300 mA, 80 V, 4 ohm, 10 V, 2 V
|
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