Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 830mW (Ta)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 0.19A
Technical parameters/Input capacitance (Ciss): 40pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 830mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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NXP | 功能相似 | TO-92-3 |
Trans MOSFET N-CH 100V 0.19A 3Pin SPT
|
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