Technical parameters/rated power: 1 W
Technical parameters/drain source resistance: 4.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.00 W
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80.0 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 300 mA
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VN0808L
|
Vishay Siliconix | 完全替代 | TO-92 |
Trans MOSFET N-CH 80V 0.3A 3Pin TO-92
|
||
VN0808L
|
Suptertex | 完全替代 |
Trans MOSFET N-CH 80V 0.3A 3Pin TO-92
|
|||
VN0808L
|
Supertex | 完全替代 | TO-92 |
Trans MOSFET N-CH 80V 0.3A 3Pin TO-92
|
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