Technical parameters/dissipated power: 12.5 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 1.25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD14016S
|
Fairchild | 类似代替 | TO-126-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
BD14016S
|
ON Semiconductor | 类似代替 | TO-126-3 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
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