Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -1.50 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.25 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 1.25 W
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11.2 mm
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD14016STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON Semiconductor BD14016STU , PNP 晶体管, 1.5 A, Vce=80 V, HFE:40, 3引脚 TO-126封装
|
||
BD1406S
|
Fairchild | 类似代替 | TO-126-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Si Transistor Epitaxial
|
||
|
|
ON Semiconductor | 类似代替 |
双极晶体管 - 双极结型晶体管(BJT) PNP Si Transistor Epitaxial
|
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