Technical parameters/dissipated power: 1.25 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/rated power (Max): 1.25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1250 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD14016STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON Semiconductor BD14016STU , PNP 晶体管, 1.5 A, Vce=80 V, HFE:40, 3引脚 TO-126封装
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|
Fairchild | 类似代替 | TO-126-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Si Transistor Epitaxial
|
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|
ON Semiconductor | 类似代替 |
双极晶体管 - 双极结型晶体管(BJT) PNP Si Transistor Epitaxial
|
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