Technical parameters/breakdown voltage: 40.0 V|40 V
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 30 Ω
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 14pF @20V(Vds)
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR57,215
|
NXP | 类似代替 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
||
BSR58
|
NXP | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSR58 晶体管, JFET, JFET, 40 V, 8 mA, 80 mA, 4 V, SOT-23, JFET
|
||
BSR58
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSR58 晶体管, JFET, JFET, 40 V, 8 mA, 80 mA, 4 V, SOT-23, JFET
|
||
BSR58
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR BSR58 晶体管, JFET, JFET, 40 V, 8 mA, 80 mA, 4 V, SOT-23, JFET
|
||
MMBFJ202
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
||
MMBFJ202
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ202. 晶体管, JFET, 40V, 3-SOT-23
|
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