Technical parameters/rated power: 1.6 W
Technical parameters/drain source resistance: 30.0 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.60 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541900000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTP2P50E
|
ON Semiconductor | 功能相似 | TO-220-3 |
功率MOSFET 2安培, 500伏 Power MOSFET 2 Amps, 500 Volts
|
||
VP2450N8
|
Microchip | 类似代替 | SOT-89 |
SOT-89P-CH 500V 0.16A
|
||
VP2450N8-G
|
Microchip | 功能相似 | SOT-89-3 |
VP2450N8-G 编带
|
||
VP2450N8-G
|
Supertex | 功能相似 | SOT-89-3 |
VP2450N8-G 编带
|
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