Technical parameters/rated power: 1.6 W
Technical parameters/dissipated power: 1.6 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 190pF @25V(Vds)
Technical parameters/rated power (Max): 1.6 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MTP2P50E
|
ON Semiconductor | 功能相似 | TO-220-3 |
功率MOSFET 2安培, 500伏 Power MOSFET 2 Amps, 500 Volts
|
||
VP2450N8
|
Microchip | 类似代替 | SOT-89 |
SOT-89P-CH 500V 0.16A
|
||
VP2450N8-G
|
Microchip | 功能相似 | SOT-89-3 |
VP2450N8-G 编带
|
||
VP2450N8-G
|
Supertex | 功能相似 | SOT-89-3 |
VP2450N8-G 编带
|
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