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Model MTP2P50E

Description 功率MOSFET 2安培， 500伏 Power MOSFET 2 Amps, 500 Volts

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(4200) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):
-500 V

Technical parameters/rated current:
-2.00 A

Technical parameters/drain source resistance:
6.00 Ω

Technical parameters/polarity:
P-Channel

Technical parameters/dissipated power:
75 W

Technical parameters/drain source voltage (Vds):
500 V

Technical parameters/Leakage source breakdown voltage:
500 V

Technical parameters/breakdown voltage of gate source:
±20.0 V

Technical parameters/Continuous drain current (Ids):
2.00 A

Technical parameters/rise time:
14 ns

Technical parameters/Input capacitance (Ciss):
1183pF @25V(Vds)

Technical parameters/rated power (Max):
75 W

Technical parameters/descent time:
19 ns

Technical parameters/operating temperature (Max):
150 ℃

Technical parameters/operating temperature (Min):
-55 ℃

Technical parameters/dissipated power (Max):
75W (Tc)

Encapsulation parameters/installation method:
Through Hole

Encapsulation parameters/Encapsulation:
TO-220-3

Dimensions/Length:
10.28 mm

Dimensions/Width:
4.82 mm

Dimensions/Height:
9.28 mm

Dimensions/Packaging:
TO-220-3

Physical parameters/operating temperature:
-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:
Unknown

Other/Packaging Methods:
Tube

Compliant with standards/RoHS standards:
Non-Compliant

Compliant with standards/lead standards:
Contains Lead

Customs information/ECCN code:
EAR99

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