Technical parameters/minimum current amplification factor (hFE): 500
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/length: 4.77 mm
External dimensions/width: 2.41 mm
External dimensions/height: 4.01 mm
External dimensions/packaging: TO-92
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5088
|
Central Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
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|
|
Micro Electronics | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Fairchild | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
Major Brands | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088
|
Continental Device | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
UTC | 功能相似 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
2N5088
|
ON Semiconductor | 功能相似 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
|
2N5088
|
TI | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
|
2N5088
|
Samsung | 功能相似 |
放大器晶体管 Amplifier Transistors
|
|||
2N5088BU
|
Fairchild | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N5088BU 单晶体管 双极, NPN, 30 V, 50 MHz, 625 mW, 100 mA, 300 hFE
|
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2N5088TA
|
ON Semiconductor | 功能相似 | TO-92-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N5088TA
|
Fairchild | 功能相似 | TO-92-3 |
NPN 晶体管，高达 30V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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