Technical parameters/frequency: 75 MHz
Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 75 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 75 @1A, 2V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 完全替代 | TO-92 |
放大器晶体管 Amplifier Transistors
|
||
MPS651
|
ON Semiconductor | 完全替代 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS651RLRA
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
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