Technical parameters/rated voltage (DC): | 60.0 V |
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Technical parameters/rated current: | 2.00 A |
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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/Maximum allowable collector current: | 2A |
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Technical parameters/minimum current amplification factor (hFE): | 75 @1A, 2V |
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Technical parameters/rated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS651RLRAG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS651RLRMG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
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