Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 2000mA |
|
Technical parameters/minimum current amplification factor (hFE): | 75 |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-92 |
|
Dimensions/Packaging: | TO-92 |
|
Other/Minimum Packaging: | 2000 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS651RLRAG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS651RLRMG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
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