Technical parameters/rated power: 300 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.003 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 6540 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 210A
Technical parameters/rise time: 82 ns
Technical parameters/Input capacitance (Ciss): 6540pF @50V(Vds)
Technical parameters/descent time: 83 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.02 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Motor Drive & Control, Motor Drive and Control, Battery Operated Drive, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1405PBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRF1405PBF 晶体管, MOSFET, N沟道, 169 A, 55 V, 5.3 mohm, 10 V, 4 V
|
||
IRF2805PBF
|
Infineon | 类似代替 | TO-220-3 |
N 通道功率 MOSFET 60A 至 79A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
||
IRF2805PBF
|
IFC | 类似代替 |
N 通道功率 MOSFET 60A 至 79A，Infineon Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
|
|||
IRFZ14PBF
|
VISHAY | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Vishay Siliconix | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
IRFZ14PBF
|
Infineon | 功能相似 |
功率MOSFET Power MOSFET
|
|||
|
IRFZ14PBF
|
LiteOn | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
|
||
|
IRFZ14PBF
|
Vishay Precision Group | 功能相似 | TO-220 |
功率MOSFET Power MOSFET
|
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