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Model IRF2805PBF
Description N Channel power MOSFETs 60A to 79A, Infineon's discrete HEXFET ® The power MOSFET series includes surface mount and lead packaged N-channel devices, with a form factor that can handle almost any board layout and thermal design challenge. Throughout the entire range, the reference on resistance reduces conduction losses, allowing designers to provide optimal system efficiency. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
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Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
4.44  yuan 4.44yuan
5+:
$ 5.9981
25+:
$ 5.5538
50+:
$ 5.2427
100+:
$ 5.1095
500+:
$ 5.0206
2500+:
$ 4.9095
5000+:
$ 4.8651
10000+:
$ 4.7984
Quantity
5+
25+
50+
100+
500+
Price
$5.9981
$5.5538
$5.2427
$5.1095
$5.0206
Price $ 5.9981 $ 5.5538 $ 5.2427 $ 5.1095 $ 5.0206
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6535) Minimum order quantity(5)
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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AUIRF2805 AUIRF2805 Infineon 类似代替 TO-220-3
INFINEON AUIRF2805 晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0039 ohm, 10 V, 2 V
PDF
AUIRF2805 AUIRF2805 International Rectifier 类似代替 TO-220-3
INFINEON AUIRF2805 晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0039 ohm, 10 V, 2 V
PDF
IRF350 IRF350 International Rectifier 功能相似 TO-204
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PDF
IRF350 IRF350 IXYS Semiconductor 功能相似
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IRFB3206PBF IRFB3206PBF International Rectifier 类似代替 TO-220-3
INFINEON IRFB3206PBF 晶体管, MOSFET, N沟道, 210 A, 60 V, 3 mohm, 10 V, 4 V
PDF
IRFB3206PBF IRFB3206PBF Infineon 类似代替 TO-220-3
INFINEON IRFB3206PBF 晶体管, MOSFET, N沟道, 210 A, 60 V, 3 mohm, 10 V, 4 V
PDF

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