Technical parameters/forward current (Max): 10 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-277
External dimensions/packaging: TO-277
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
V10P10-E3/86A
|
Vishay Semiconductor | 类似代替 | PowerDFN-3 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
|
|
LiteOn | 类似代替 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10-E3/87A
|
VISHAY | 完全替代 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10HE3/86A
|
Vishay Semiconductor | 完全替代 | PowerDFN-3 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10HE3/86A
|
VISHAY | 完全替代 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
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