Encapsulation parameters/Encapsulation: TO-277
External dimensions/packaging: TO-277
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: Schottky (Diodes & Rectifiers)
Other/궟동: Single Dual Anode
Other/Case/Package: TO-277A
Other/Reverse Voltage: 100 V
Other/순방향압: 0.68 V
Other/Forward Continuous Current: 10 A
Other/Max Surge Current: 180 A
Other/Reverse Current IR: 150 uA
Other/Delete: Schottky Diodes
Other/ị동: REEL
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
V10P10-E3/87A
|
VISHAY | 类似代替 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10-M3/86A
|
Vishay Semiconductor | 类似代替 | TO-277 |
VISHAY V10P10-M3/86A. 肖特基整流器, 单, 100 V, 10 A, TO-277A, 3 引脚, 620 mV
|
||
V10P10HE3/86A
|
Vishay Semiconductor | 类似代替 | PowerDFN-3 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
||
V10P10HE3/86A
|
VISHAY | 类似代替 | TO-277 |
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
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