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Model V10P10-E3/86A
Description 高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Product QR code
Brand: Vishay Semiconductor
Packaging PowerDFN-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9419) Minimum order quantity(1)
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Technical parameters/forward voltage:

680mV @10A

 

Technical parameters/forward current:

10 A

 

Technical parameters/Maximum forward surge current (Ifsm):

180 A

 

Technical parameters/forward voltage (Max):

620 mV

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

2

 

Encapsulation parameters/Encapsulation:

PowerDFN-3

 

Dimensions/Packaging:

PowerDFN-3

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
V10P10-E3/87A V10P10-E3/87A VISHAY 类似代替 TO-277
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF
V10P10-M3/86A V10P10-M3/86A Vishay Semiconductor 类似代替 TO-277
VISHAY V10P10-M3/86A. 肖特基整流器, 单, 100 V, 10 A, TO-277A, 3 引脚, 620 mV
V10P10HE3/86A V10P10HE3/86A Vishay Semiconductor 类似代替 PowerDFN-3
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF
V10P10HE3/86A V10P10HE3/86A VISHAY 类似代替 TO-277
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF

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