Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.125 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 140 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 22A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 2880pF @100V(Vds)
Technical parameters/rated power (Max): 140 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 140W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Industrial, Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP24N65E-GE3
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
E系列功率MOSFET E Series Power MOSFET
|
||
STB30N65M5
|
ST Microelectronics | 完全替代 | TO-263-3 |
N沟道650 V， 0.125 I© ， 22 A， MDmeshâ ?? ¢ V功率MOSFET D²PAK ， TO- 220FP ， I²PAK ， TO- 220 ， TO- 247 N-channel 650 V, 0.125 Ω, 22 A, MDmesh⢠V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247
|
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