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Model STB30N65M5
Description N沟道650 V， 0.125 I© ， 22 A， MDmeshâ ?? ¢ V功率MOSFET D²PAK ， TO- 220FP ， I²PAK ， TO- 220 ， TO- 247 N-channel 650 V, 0.125 Ω, 22 A, MDmesh™ V Power MOSFET D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Product QR code
Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
26.47  yuan 26.47yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6054) Minimum order quantity(1)
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Technical parameters/dissipated power:

140 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/rise time:

8 ns

 

Technical parameters/Input capacitance (Ciss):

2880pF @100V(Vds)

 

Technical parameters/rated power (Max):

140 W

 

Technical parameters/descent time:

10 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

140W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP30N65M5 STP30N65M5 ST Microelectronics 完全替代 TO-220-3
STMICROELECTRONICS STP30N65M5 功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.125 ohm, 10 V, 4 V
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