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Model SIHP24N65E-GE3
Description N Channel MOSFET, E-series, low quality factor, Vishay Semiconductor Vishay E-series MOSFET power supply is a high-voltage transistor with ultra-low maximum on resistance, low sensitivity value, and fast switching function. They provide various current ratings. Typical applications include servers and telecommunications power supplies, LED lighting, flyback converters, power factor correction (PFC), and switch mode power supplies (SMPS). ###Features: Low sensitivity value (FOM) RDS (on) x Qg, low input capacitance (Ciss), low on resistance (RDS (on)), ultra-low gate charge (Qg), fast switching, reduced switching and conduction losses # # MOSFET transistor, Vishay Semiconductor
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Brand: Vishay Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
18.12  yuan 18.12yuan
5+:
$ 21.1992
50+:
$ 20.2933
200+:
$ 19.7859
500+:
$ 19.6591
1000+:
$ 19.5323
2500+:
$ 19.3873
5000+:
$ 19.2967
7500+:
$ 19.2061
Quantity
5+
50+
200+
500+
1000+
Price
$21.1992
$20.2933
$19.7859
$19.6591
$19.5323
Price $ 21.1992 $ 20.2933 $ 19.7859 $ 19.6591 $ 19.5323
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5711) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.12 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 250 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 650 V

Technical parameters/rise time: 84 ns

Technical parameters/Input capacitance (Ciss): 2740pF @100V(Vds)

Technical parameters/descent time: 69 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 250 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.51 mm

External dimensions/width: 4.65 mm

External dimensions/height: 15.49 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Computers & Computer Peripherals, Portable Devices, Alternative Energy, Industrial, Motor Drive & Control, Lighting, Communications & Networking, Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SIHP24N65E-E3 SIHP24N65E-E3 Vishay Semiconductor 类似代替 TO-220-3
VISHAY SIHP24N65E-E3 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
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