Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.12 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/leakage source breakdown voltage: 650 V
Technical parameters/rise time: 84 ns
Technical parameters/descent time: 69 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Portable Devices, Lighting, Computers & Computer Peripherals, Power Management, Communications & Networking, Motor Drive & Control, Industrial, Alternative Energy
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIHP24N65E-GE3
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
N 通道 MOSFET，E 系列，低品质因数，Vishay Semiconductor Vishay E 系列 MOSFET 电源是高电压晶体管，具有超低最大接通电阻、低灵敏值和快速切换功能。 它们提供各种电流额定值。 典型应用包括服务器和电信电源、LED 照明、回扫转换器、功率因数校正 (PFC) 和开关模式电源 (SMPS)。 ### 特点 低灵敏值 (FOM) RDS(on) x Qg 低输入电容 (Ciss) 低接通电阻（RDS（接通）） 超低栅极电荷 (Qg) 快速切换 减少切换和传导损耗 ### MOSFET 晶体管，Vishay Semiconductor
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