Technical parameters/rated power: 0.74 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.6 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 0.74 W
Technical parameters/threshold voltage: 1.6 V
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 0.7A
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 190 pF
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 740mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
|
|
NJS | 功能相似 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
|||
TN0604N3-G-P005
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 40V 0.7A 3Pin TO-92 T/R
|
||
TN0604N3-G-P013
|
Microchip | 类似代替 | TO-92-3 |
Trans MOSFET N-CH 40V 0.7A 3Pin TO-92 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review