Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 2.00 A
Technical parameters/output voltage: 100 V
Technical parameters/output current: 2 A
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 50 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/thermal resistance: 62.5℃/W (RθJA)
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 1000 @1A, 4V
Technical parameters/rated power (Max): 2 W
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Technical parameters/input voltage: 5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.28 mm
External dimensions/width: 4.83 mm
External dimensions/height: 15.75 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TIP112
|
Poinn | 完全替代 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
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|
|
ETC | 完全替代 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
|||
TIP112
|
ST Microelectronics | 完全替代 | TO-220-3 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
|
|
NTE Electronics | 完全替代 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
|||
TIP112
|
Fairchild | 完全替代 | TO-220-3 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
TIP112
|
Multicomp | 完全替代 | TO-220 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
|
|
CJ | 完全替代 | TO-220-3 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
TIP112
|
UTC | 完全替代 | TO-220 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
TIP112
|
Intersil | 完全替代 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
|||
TIP112
|
Central Semiconductor | 完全替代 | TO-220-3 |
整体结构与内置的基线发射器分流电阻器 Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
||
TIP127G
|
ON Semiconductor | 类似代替 | TO-220-3 |
PNP 复合晶体管,On Semiconductor 这些 ON Semiconductor 复合晶体管是包含两个双极性晶体管(集成或分离设备)的复合结构。 这些设备连接,因此第二个晶体管进一步放大由第一个晶体管放大的电流。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
|
||
TIP41CG
|
ON Semiconductor | 类似代替 | TO-220-3 |
NPN 功率晶体管,ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
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