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Model TIP127G
Description PNP Compound transistors, such as On Semiconductor, are composite structures that include two bipolar transistors (integrated or separated devices). These devices are connected, so the second transistor further amplifies the current amplified by the first transistor. ###Standard Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
3.27  yuan 3.27yuan
5+:
$ 4.4145
25+:
$ 4.0875
50+:
$ 3.8586
100+:
$ 3.7605
500+:
$ 3.6951
2500+:
$ 3.6134
5000+:
$ 3.5807
10000+:
$ 3.5316
Quantity
5+
25+
50+
100+
500+
Price
$4.4145
$4.0875
$3.8586
$3.7605
$3.6951
Price $ 4.4145 $ 4.0875 $ 3.8586 $ 3.7605 $ 3.6951
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9999) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): -100 V

Technical parameters/rated current: -5.00 A

Technical parameters/output voltage: 100 V

Technical parameters/output current: 5 A

Technical parameters/polarity: PNP, P-Channel

Technical parameters/dissipated power: 65 W

Technical parameters/breakdown voltage (collector emitter): 100 V

Technical parameters/thermal resistance: 62.5℃/W (RθJA)

Technical parameters/maximum allowable collector current: 5A

Technical parameters/minimum current amplification factor (hFE): 1000 @3A, 3V

Technical parameters/rated power (Max): 2 W

Technical parameters/DC current gain (hFE): 1000

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 2000 mW

Technical parameters/input voltage: 2.5 V

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.28 mm

External dimensions/width: 4.82 mm

External dimensions/height: 9.28 mm

External dimensions/packaging: TO-220-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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TIP126TU TIP126TU ON Semiconductor 类似代替 TO-220-3
Darlington PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
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