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Specification parameters
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Technical parameters/frequency:

3 MHz

Technical parameters/rated voltage (DC):

100 V

Technical parameters/rated current:

6.00 A

Technical parameters/number of pins:

Technical parameters/polarity:

NPN

Technical parameters/dissipated power:

65 W

Technical parameters/gain bandwidth product:

3 MHz

Technical parameters/breakdown voltage (collector emitter):

100 V

Technical parameters/thermal resistance:

1.67℃/W (RθJC)

Technical parameters/Maximum allowable collector current:

Technical parameters/minimum current amplification factor (hFE):

15 @3A, 4V

Technical parameters/rated power (Max):

2 W

Technical parameters/DC current gain (hFE):

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-65 ℃

Technical parameters/dissipated power (Max):

2000 mW

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-220-3

Dimensions/Length:

10.28 mm

Dimensions/Width:

4.83 mm

Dimensions/Height:

15.75 mm

Dimensions/Packaging:

TO-220-3

Physical parameters/materials:

Silicon

Physical parameters/operating temperature:

-65℃ ~ 150℃

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Other/Manufacturing Applications:

Industrial, Industrial, Industrial,

Compliant with standards/RoHS standards:

RoHS Compliant

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	BD243CG	ON Semiconductor	类似代替	TO-220-3	NPN 功率晶体管，ON Semiconductor ### 标准带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管功率晶体管双晶体管复合晶体管对高电压晶体管射频晶体管双极/FET 晶体管	PDF
	TIP112G	ON Semiconductor	类似代替	TO-220-3	ON SEMICONDUCTOR TIP112G 达林顿双极晶体管	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643