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Specification parameters
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Technical parameters/number of channels:

Technical parameters/drain source resistance:

0.097 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

190 W

Technical parameters/threshold voltage:

4 V

Technical parameters/drain source voltage (Vds):

600 V

Technical parameters/Leakage source breakdown voltage:

600 V

Technical parameters/Continuous drain current (Ids):

29A

Technical parameters/rise time:

53.4 ns

Technical parameters/Input capacitance (Ciss):

2785pF @50V(Vds)

Technical parameters/rated power (Max):

210 W

Technical parameters/descent time:

61.8 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

190W (Tc)

Encapsulation parameters/installation method:

Through Hole

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-247-3

Dimensions/Length:

15.75 mm

Dimensions/Width:

5.15 mm

Dimensions/Height:

20.15 mm

Dimensions/Packaging:

TO-247-3

Physical parameters/operating temperature:

150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tube

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Compliant with the REACH SVHC standard:

No SVHC

Compliant with standard/REACH SVHC version:

2015/12/17

Customs

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
IRFPS40N60KPBF	Vishay Siliconix	功能相似	SUPER-247	TO-247-3 N-CH 600V 40A 130mΩ	PDF
IRFPS40N60KPBF	VISHAY	功能相似	SUPER-247	TO-247-3 N-CH 600V 40A 130mΩ	PDF
SIHG33N60E-GE3	Vishay Semiconductor	功能相似	TO-247-3	晶体管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V	PDF
STW55NM60ND	ST Microelectronics	类似代替	TO-247-3	STMICROELECTRONICS STW55NM60ND 功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V	PDF

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