Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.083 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 278 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 3508pF @100V(Vds)
Technical parameters/descent time: 54 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 278000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/width: 5.31 mm
External dimensions/height: 20.7 mm
External dimensions/packaging: TO-247-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Lighting, Alternative Energy, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, Communications & Networking, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPW60R099CPFKSA1
|
Infineon | 功能相似 | TO-247-3 |
INFINEON IPW60R099CPFKSA1 功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V
|
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