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Model STW55NM60ND

Description STMICROELECTRONICS STW55NM60ND 功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V

Brand: ST Microelectronics

Packaging TO-247-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.047 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	350 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	600 V
Technical parameters/rise time:	68 ns
Technical parameters/Input capacitance (Ciss):	5800pF @50V(Vds)
Technical parameters/rated power (Max):	350 W
Technical parameters/descent time:	96 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	350W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Length:	15.75 mm
Dimensions/Width:	5.15 mm
Dimensions/Height:	20.15 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/operating temperature:	150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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