Technical parameters/dissipated power: | 1 W |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 9.44 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AA-2 |
|
Dimensions/Packaging: | DO-214AA-2 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ8.5A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ8.5AHE3/52
|
Vishay Semiconductor | 类似代替 | DO-214AA |
Diode TVS Single Uni-Dir 8.5V 600W 2Pin SMB T/R
|
||
SMBJ8.5AHE3/52
|
VISHAY | 类似代替 | DO-214AA |
Diode TVS Single Uni-Dir 8.5V 600W 2Pin SMB T/R
|
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