Technical parameters/operating voltage: | 8.5 V |
|
Technical parameters/number of circuits: | 1 |
|
Technical parameters/dissipated power: | 1 W |
|
Technical parameters/clamp voltage: | 14.4 V |
|
Technical parameters/test current: | 1 mA |
|
Technical parameters/maximum reverse breakdown voltage: | 10.4 V |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 9.44 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AA-2 |
|
Dimensions/Length: | 4.57 mm |
|
Dimensions/Width: | 3.94 mm |
|
Dimensions/Height: | 2.44 mm |
|
Dimensions/Packaging: | DO-214AA-2 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | General |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ8.5A-M3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
ESD 抑制器/TVS 二极管 8.5V 1000W UniDir TransZorb 5% Tol
|
||
SMBJ8.5AHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 8.5V 600W 2Pin SMB T/R
|
||
SMBJ8.5AHE3/52
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 8.5V 600W 2Pin SMB T/R
|
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