Technical parameters/working voltage: 8.5 V
Technical parameters/breakdown voltage: 9.44 V
Technical parameters/clamp voltage: 14.4 V
Technical parameters/peak pulse power: 600 W
Technical parameters/minimum reverse breakdown voltage: 9.44 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive grade
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMBJ8.5A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA-2 |
TRANSZORB® 瞬态电压抑制器表面安装单向 600W,SMBJ 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
SMBJ8.5A-M3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 8.5V 600W 2Pin SMB T/R
|
||
SMBJ8.5A-M3/52
|
VISHAY | 完全替代 | SMB |
Diode TVS Single Uni-Dir 8.5V 600W 2Pin SMB T/R
|
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