Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 1.5 W |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Continuous drain current (Ids): | 83A |
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Technical parameters/rise time: | 1450 ns |
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Technical parameters/Input capacitance (Ciss): | 9800pF @10V(Vds) |
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Technical parameters/descent time: | 510 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1500 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1010N
|
Infineon | 功能相似 | TO-220 |
Trans MOSFET N-CH 55V 85A 3Pin(3+Tab) TO-220AB
|
||
IRF1010NPBF
|
International Rectifier | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF1010NPBF 场效应管, N 通道, MOSFET, 55V, 85A TO-220AB 新
|
||
IRF1010NPBF
|
Infineon | 功能相似 | TO-220-3 |
INTERNATIONAL RECTIFIER IRF1010NPBF 场效应管, N 通道, MOSFET, 55V, 85A TO-220AB 新
|
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